npn transistor
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网络 晶体管; NPN晶体管; 型晶体管; NPN型晶体管
双语例句
- The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容，可用于制造高性能的互补双极电路。 - Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论NPN型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。 - Kyanite-sillimanite type facies series silicon npn mesa transistor
蓝晶石-硅线石型相系 - A super β NPN transistor is developed. And the volume production process of the device is described.
阐述了一种超βNPN型晶体管的研制及实现批量生产的过程。 - Ga base region was formed using low concentration doping-junction depth process-high concentration doping method, and the NPN transistor sample was prepared.
利用低浓度掺杂-结深推移-高浓度掺杂设计方法形成Ga基区，制备出NPN晶体管样品。 - The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor, high cut-off frequency ( 70GHz) and high collector current capacity has been studied in detail.
因此在设计中，选用了具有低噪声基底、高截止频率（70GHz）、高集电极电流容量的锗化硅材料的NPN晶体管，有利于提高系统的噪声性能。 - A novel silicon photoelectric negative resistance device& photoelectric dual coupled areas transistor ( PDUCAT) is proposed, which is composed of a P+ N photoelectric diode and two vertical NPN transistors beside the diode oppositely.
提出了一种新型结构的硅光电负阻器件&光电双耦合区晶体管（photoelectricdualcoupledareatransistor，PDUCAT），它是由一个P+N结光电二极管和位于两侧的两个纵向NPN管构成的。 - Development of a Super β NPN Transistor
一种超βNPN晶体管的研制 - A vertical PNP transistor with P-buried collector is used as injector which is merged with the downward operating NPN transistor.
该结构采用P埋集电极纵向PNP晶体管作注入器，巧妙地实现了与正常向下工作的NPN晶体管并合。 - The device is constructed with a double base, double collector npn transistor.
器件结构是双基极、双集电极npn晶体管。 - Study on Characteristics of 4H-SiC npn Bipolar Transistor
4H-SiCnpn双极晶体管特性研究 - To show the potential advantages in high frequeucy and low noise performances, an Npn GaAs transistor with a fine structure, as an example, is proposed.
给出了一个细线条结构的NpnGaAs晶体管作为进一步考察高频和噪声性能的实例。 - A Model for the Technique Parameter Calculation of Up-diffused I~ 2L NPN Transistor Base
上扩散I~2L电路中纵向npn管基区工艺参数的近似计算模型 - The design and property study of a new NPN vertical dual carrier field effect transistor
新型垂直沟道的NPN型偶载场效应晶体管的设计及特性 - Then, DC characteristics of the transistor are described by using a mathematical model, the calculated current gain is obtained and an optimal design scheme of a Bi-CMOS npa bipolar transistor fully-compatible with CMOS process is presented.
然后，建立了分析计算晶体管直流特性的数学模型，并分析计算了工艺参数、器件结构对器件性能的影响，给出了CMOS工艺全兼容的Bi-CMOS双极型npn晶体管的最佳设计方案。